位置：首页 > IC中文资料 > K4E660812E-TCSLASHL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K4E660812E-TCSLASHL | 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe | Samsung 三星 |   | |
8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe | Samsung 三星 | | ||
8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe | Samsung 三星 | | ||
8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe | Samsung 三星 | | ||
8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe | Samsung 三星 | | ||
8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe | Samsung 三星 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
6000 |
面议 |
19 |
TSOP |
|||
SAMSUNG |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
SAMSUNG |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SAMSUNG |
25+ |
BGA |
2140 |
全新原装!现货特价供应 |
|||
SAMSUNG |
24+ |
BGA |
1172 |
||||
SAN |
SSOP |
2100 |
优势库存 |
||||
SAMSUNG/三星 |
23+ |
TSOP |
5000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SAMSUNG/三星 |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SAMSUNG |
2023+ |
BGA |
3000 |
进口原装现货 |
|||
SAMSUNG/三星 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
K4E660812E-TCSLASHL芯片相关品牌
K4E660812E-TCSLASHL规格书下载地址
K4E660812E-TCSLASHL参数引脚图相关
- l482
- l478
- l3g4200d
- l393
- l32
- l298n
- l298
- l297
- l295
- l293d
- l234
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- K4N37
- K4N36
- K4N35
- K4N33
- K4N32
- K4N31
- K4N30
- K4N29A
- K4N29
- K4N28
- K4N27
- K4N26
- K4N25H
- K4N25G
- K4N25A
- K4N25
- K4MDW62
- K4-LFCN
- K4H-BLD
- K4-GALI
- K4E661612C-TC45
- K4E661612C-TC
- K4E661612C-T60
- K4E661612C-T50
- K4E661612C-T45
- K4E661612C-T
- K4E661612C-L60
- K4E661612C-L50
- K4E661612C-L45
- K4E661612C-L
- K4E661612C-60
- K4E661612C-50
- K4E661612C-45
- K4E661612C
- K4E661612B-TC
- K4E661612B-L
- K4E661612B
- K4E661611D-TC60
- K4E661611D-TC50
- K4E661611D
- K4E660812E-TC/L
- K4E660812E-JCSLASHL
- K4E660812E-JC/L
- K4E660812E
- K4E660812C
- K4E660812B
- K4E660412E-TP60
- K4E660412E-TP50
- K4E660412E-TP45
- K4E660412E-TI60
- K4E660412E-TI50
- K4E660412E-TI45
- K4E660412E-JP60
- K4E660412E-JP50
- K4E660412E-JP45
- K4E660412E-JI60
- K4E660412E-JI50
- K4E660412E-JI45
- K4E660412E
- K4E660412D
- K4A60DA
- K-4985
- K-4970
- K4970
- K-4959
- K-4942
- K-4931
- K-474
- K-473
- K-472
- K-471
- K-470
- K4500
- K4212
- K41B0J
- K4145
- K4108
- K4107
- K4101
- K4100
K4E660812E-TCSLASHL数据表相关新闻
K4E6E304EB-EGCF
K4E6E304EB-EGCF
2025-1-13K4B4G1646E-BYMA中文资料，PDF数据手册，现货供应商，假一罚十
K4B4G1646E-BYMA 品牌:SAMSUNG 数量:46639 批号:20+ 封装:BGA
2024-5-20K4F6E3S4HM-MGCJ
K4F6E3S4HM-MGCJ
2022-4-16K4E6E304EB-EGCF 原装现货 特价销售
只做原装正品，原包装标签 欢迎咨询！
2021-8-23K4B8G1646Q-MYK0
K4B8G1646Q-MYK0
2020-4-16K4B8G1646D-MYK0
K4B8G1646D-MYK0
2020-4-16
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
