位置：首页 > IC中文资料第5686页 > K4E641612C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K4E641612C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 |   | |
K4E641612C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | SAMSUNG 三星 | | |
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | SAMSUNG 三星 | |
K4E641612C产品属性
- 类型
描述
- 型号
K4E641612C
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
4M x 16bit CMOS Dynamic RAM with Extended Data Out
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
00+ |
BGA |
1970 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SAM |
23+ |
BGA |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
SAMSUNG |
TSOP50 |
0202+ |
667 |
全新原装进口自己库存优势 |
|||
SAMSUNG |
25+ |
BGA |
90000 |
一级代理商进口原装现货、价格合理 |
|||
SAMSUNG/三星 |
23+ |
TSOP |
5000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SAMSUNG(三星) |
25+ |
N/A |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
SAMSUNG/三星 |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
SAMSUNG/三星 |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
|||
SAMSUNG/三星 |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
SAMSUNG |
23+ |
BGA |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
K4E641612C规格书下载地址
K4E641612C参数引脚图相关
- l482
- l478
- l3g4200d
- l393
- l32
- l298n
- l298
- l297
- l295
- l293d
- l234
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- K4N37
- K4N36
- K4N35
- K4N33
- K4N32
- K4N31
- K4N30
- K4N29A
- K4N29
- K4N28
- K4N27
- K4N26
- K4N25H
- K4N25G
- K4N25A
- K4N25
- K4MDW62
- K4-LFCN
- K4H-BLD
- K4-GALI
- K4E660412E
- K4E660412D
- K4E660411D-TC60
- K4E660411D-TC50
- K4E660411D-JC60
- K4E660411D-JC50
- K4E660411D
- K4E641612D-TC6000
- K4E641612D
- K4E641612C-TL60
- K4E641612C-TL50
- K4E641612C-TL45
- K4E641612C-TC60
- K4E641612C-TC50
- K4E641612C-T45
- K4E641612C-T
- K4E641612C-L
- K4E641612C-60
- K4E641612C-50
- K4E641612C-45
- K4E641612B-TC
- K4E641612B-L
- K4E641612B
- K4E641611D-TC60
- K4E641611D-TC50
- K4E640812E-TC/L
- K4E640812E-JC/L
- K4E640812E
- K4E640812C
- K4E640812B
- K4E640412E-TP60
- K4E640412E-TP50
- K4E640412E-TP45
- K4E640412E-TI60
- K4E640412E-TI50
- K4E640412E-TI45
- K4E640412E-JP60
- K4E640412E-JP50
- K4E640412E-JP45
- K4E640412E-JI60
- K4A60DA
- K-4985
- K-4970
- K4970
- K-4959
- K-4942
- K-4931
- K-474
- K-473
- K-472
- K-471
- K-470
- K4500
- K4212
- K41B0J
- K4145
- K4108
- K4107
- K4101
- K4100
K4E641612C数据表相关新闻
K4E6E304EB-EGCF
K4E6E304EB-EGCF
2025-1-13K4B4G1646E-BYMA中文资料，PDF数据手册，现货供应商，假一罚十
K4B4G1646E-BYMA 品牌:SAMSUNG 数量:46639 批号:20+ 封装:BGA
2024-5-20K4F6E3S4HM-MGCJ
K4F6E3S4HM-MGCJ
2022-4-16K4E6E304EB-EGCF 原装现货 特价销售
只做原装正品，原包装标签 欢迎咨询！
2021-8-23K4B8G1646Q-MYK0
K4B8G1646Q-MYK0
2020-4-16K4B8G1646D-MYK0
K4B8G1646D-MYK0
2020-4-16
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
