位置：首页 > IC中文资料第5686页 > K4E641612B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K4E641612B | 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | Samsung 三星 |   | |
K4E641612B | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung 三星 | | |
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | Samsung 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | Samsung 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | Samsung 三星 | | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f | Samsung 三星 | |
K4E641612B产品属性
- 类型
描述
- 型号
K4E641612B
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
4M x 16bit CMOS Dynamic RAM with Extended Data Out
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
23+ |
TSOP |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SAMSUNG |
15+ |
11560 |
全新原装,现货库存,长期供应 |
||||
SAMSUNG |
23+ |
BGA |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
SAMSUNG/三星 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
SAM |
23+ |
BGA |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
SAMSUNG |
23+24 |
TSOP- |
9680 |
原盒原标.进口原装.支持实单 .价格优势 |
|||
SAMSUNG/三星 |
24+ |
TSOP |
9600 |
原装现货,优势供应,支持实单! |
|||
SAMSUNG/三星 |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
SAMSUNG/三星 |
2023+ |
BGA |
1970 |
专注全新正品,优势现货供应 |
|||
SAMSUNG/三星 |
1824+ |
TSOP |
3230 |
原装现货专业代理,可以代拷程序 |
K4E641612B规格书下载地址
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DdatasheetPDF页码索引
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