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K4D价格

参考价格：￥231.8660

型号：K4D-24V-9 品牌：M.E.C. Relays 备注：这里有K4D多少钱，2024年最近7天走势，今日出价，今日竞价，K4D批发/采购报价，K4D行情走势销售排行榜，K4D报价。

型号	功能描述	生产厂家&企业
K4D263238A	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238A-GC33	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238A-GC36	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238A-GC40	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238A-GC45	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238A-GC50	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238D	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Dis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh	SamsungSamsung Group 三星三星半导体
K4D263238D-QC40	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Dis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh	SamsungSamsung Group 三星三星半导体
K4D263238D-QC50	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Dis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh	SamsungSamsung Group 三星三星半导体
K4D263238E	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238E-GC25	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238E-GC2A	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238E-GC33	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238E-GC36	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238E-GC40	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238E-GC45	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238F	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Fis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh	SamsungSamsung Group 三星三星半导体
K4D263238F-QC40	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Fis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh	SamsungSamsung Group 三星三星半导体
K4D263238F-QC50	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Fis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh	SamsungSamsung Group 三星三星半导体
K4D263238G-GC	128Mbit GDDR SDRAM GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi	SamsungSamsung Group 三星三星半导体
K4D263238G-GC2A	128Mbit GDDR SDRAM GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi	SamsungSamsung Group 三星三星半导体
K4D263238G-GC33	128Mbit GDDR SDRAM GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi	SamsungSamsung Group 三星三星半导体
K4D263238G-GC36	128Mbit GDDR SDRAM GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi	SamsungSamsung Group 三星三星半导体
K4D263238G-VC	128Mbit GDDR SDRAM GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi	SamsungSamsung Group 三星三星半导体
K4D263238K	Consumer Memory SDRAMProductGuide MemoryDivision November2007	SamsungSamsung Group 三星三星半导体
K4D263238M	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238is134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238M-QC45	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238is134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238M-QC50	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238is134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238M-QC55	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238is134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D263238M-QC60	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238is134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp	SamsungSamsung Group 三星三星半导体
K4D26323QG	128Mbit GDDR SDRAM 1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323QGis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricat	SamsungSamsung Group 三星三星半导体
K4D26323QG-GC25	128Mbit GDDR SDRAM 1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323QGis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricat	SamsungSamsung Group 三星三星半导体
K4D26323QG-GC2A	128Mbit GDDR SDRAM 1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323QGis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricat	SamsungSamsung Group 三星三星半导体
K4D26323QG-GC33	128Mbit GDDR SDRAM 1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323QGis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricat	SamsungSamsung Group 三星三星半导体
K4D26323RA	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi	SamsungSamsung Group 三星三星半导体
K4D26323RA-GC	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi	SamsungSamsung Group 三星三星半导体
K4D26323RA-GC2A	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi	SamsungSamsung Group 三星三星半导体
K4D26323RA-GC33	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi	SamsungSamsung Group 三星三星半导体
K4D26323RA-GC36	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi	SamsungSamsung Group 三星三星半导体
K4D261638	128Mbit GDDR SDRAM 文件：225.88 Kbytes Page：18 Pages	SamsungSamsung Group 三星三星半导体
K4D261638E	2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 文件：215.47 Kbytes Page：16 Pages	SamsungSamsung Group 三星三星半导体
K4D261638E-TC2A	2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 文件：215.47 Kbytes Page：16 Pages	SamsungSamsung Group 三星三星半导体
K4D261638E-TC33	2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 文件：215.47 Kbytes Page：16 Pages	SamsungSamsung Group 三星三星半导体
K4D261638E-TC36	2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 文件：215.47 Kbytes Page：16 Pages	SamsungSamsung Group 三星三星半导体
K4D261638E-TC40	2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 文件：215.47 Kbytes Page：16 Pages	SamsungSamsung Group 三星三星半导体
K4D261638E-TC50	2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 文件：215.47 Kbytes Page：16 Pages	SamsungSamsung Group 三星三星半导体
K4D261638F	128Mbit GDDR SDRAM 文件：225.88 Kbytes Page：18 Pages	SamsungSamsung Group 三星三星半导体
K4D261638F-TC25	128Mbit GDDR SDRAM 文件：225.88 Kbytes Page：18 Pages	SamsungSamsung Group 三星三星半导体
K4D261638F-TC2A	128Mbit GDDR SDRAM 文件：225.88 Kbytes Page：18 Pages	SamsungSamsung Group 三星三星半导体
K4D261638F-TC33	128Mbit GDDR SDRAM 文件：225.88 Kbytes Page：18 Pages	SamsungSamsung Group 三星三星半导体
K4D261638F-TC36	128Mbit GDDR SDRAM 文件：225.88 Kbytes Page：18 Pages	SamsungSamsung Group 三星三星半导体
K4D261638F-TC40	128Mbit GDDR SDRAM 文件：225.88 Kbytes Page：18 Pages	SamsungSamsung Group 三星三星半导体
K4D261638F-TC50	128Mbit GDDR SDRAM 文件：225.88 Kbytes Page：18 Pages	SamsungSamsung Group 三星三星半导体
K4D28163HD	128Mbit DDR SDRAM 文件：121.01 Kbytes Page：16 Pages	SamsungSamsung Group 三星三星半导体
K4D28163HD-TC36	128Mbit DDR SDRAM 文件：121.01 Kbytes Page：16 Pages	SamsungSamsung Group 三星三星半导体
K4D28163HD-TC40	128Mbit DDR SDRAM 文件：121.01 Kbytes Page：16 Pages	SamsungSamsung Group 三星三星半导体
K4D28163HD-TC50	128Mbit DDR SDRAM 文件：121.01 Kbytes Page：16 Pages	SamsungSamsung Group 三星三星半导体
K4D28163HD-TC60	128Mbit DDR SDRAM 文件：121.01 Kbytes Page：16 Pages	SamsungSamsung Group 三星三星半导体
K4D310-AB20-09	包装：散装描述：MOTORIZED IMPELLER 风扇，热管理无刷直流风扇（BLDC）	ebm-papstebm-papst Inc. 依必安派特依必安派特公司
K4D551638D	256Mbit GDDR SDRAM 文件：230.68 Kbytes Page：18 Pages	SamsungSamsung Group 三星三星半导体

K4D产品属性

类型
描述
型号
K4D
制造商
Panasonic Electric Works

K4D供应商更多...

更新时间：2024-5-21 17:11:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市航宇科工半导体有限公司	K4D263238A-QC45	NULL	23+	BGA	4865	中国航天工业部战略合作伙伴行业领导者	询价
深圳市振宏微科技有限公司	K4D263238A-GC40	SAMSUNG	23+	BGA	28000	原装正品	询价
深圳市近平电子有限公司	K4D263238A--GC45		6000	面议	19	BGA	询价
深圳市美思瑞电子科技有限公司	K4D263238AA-QC55	SAMSUNG/三星	22+	TSOP	12032	现货,原厂原装假一罚十!	询价
深圳市杰顺创科技有限公司	K4D263238A-GC45	SAMSUNG/三星	19+	BGA	12056	进口原装现货	询价
深圳市威雅利发展有限公司	K4D263238A-GC45	SAMSUNG	16+	BGA	650	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市芯诚实创科技有限公司	K4D263238A-GV45	SAMSUNG	2022	BGA	2600	全新原装现货热卖	询价
深圳市胜彬电子有限公司	K4D263238A-GC45	SAMSUNG	22+	BGA	8000	原装正品支持实单	询价
深圳市维尔达电子有限公司	K4D263238A-GC45	SAMSUNG	2023+		80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
瀚佳科技(深圳)有限公司	K4D263238A-GC40	SAMSUNG	21+	QFP	35200	一级代理/放心采购	询价