型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
K4A60DA | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) | TOSHIBA 东芝 | ||
SCRs General Description Available either in sensitive or standard gate triggering levels, the 4A SCR series is suitable to fit all modes of control found inapplications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits | ADV 爱德微 | |||
SCRs General Description Available either in sensitive or standard gate triggering levels, the 4A SCR series is suitable to fit all modes of control found inapplications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits | ADV 爱德微 | |||
SCRs General Description Available either in sensitive or standard gate triggering levels, the 4A SCR series is suitable to fit all modes of control found inapplications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits | ADV 爱德微 | |||
SCRs General Description Available either in sensitive or standard gate triggering levels, the 4A SCR series is suitable to fit all modes of control found inapplications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits | ADV 爱德微 | |||
SCRs General Description Available either in sensitive or standard gate triggering levels, the 4A SCR series is suitable to fit all modes of control found inapplications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits | ADV 爱德微 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
TO-220F |
5000 |
只做原装公司现货 |
|||
TOSHIBA/东芝 |
21+ |
TO220F |
10000 |
原装现货假一罚十 |
|||
T |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
|||
TOSHIBA/东芝 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
TOSHIBA/东芝 |
23+ |
TO-220 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
TOSHIBA/东芝 |
TO220F |
275000 |
一级代理原装正品,价格优势,长期供应! |
||||
TOSHIBA/东芝 |
08+ |
TO-220 |
19 |
原装正品现货,可开发票,假一赔十 |
|||
TOS |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
TOS进口原 |
23+ |
TO-220F |
7000 |
||||
TOS |
17+ |
TO-220F |
6200 |
K4A60DA规格书下载地址
K4A60DA参数引脚图相关
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- K4A8G165WB-BCRC
- K4A8G165WB-BCPB
- K4A8G165WB
- K4A8G085WC
- K4A8G085WB-BITD
- K4A8G085WB-BIRC
- K4A8G085WB-BIPB
- K4A8G085WB-BCTD
- K4A8G085WB-BCRCSLASHPB
- K4A8G085WB-BCRC/PB
- K4A8G085WB-BCRC
- K4A8G085WB-BCPB
- K4A8G085WB
- K4A8G045WB-BCTD
- K4A8G045WB-BCRCSLASHPB
- K4A8G045WB-BCRC/PB
- K4A8G045WB-BCRC
- K4A8G045WB-BCPB
- K4A8G045WB
- K4A60DB
- K4A4G165WF-BCWE
- K4A4G165WF-BCTD
- K4A4G165WF
- K4A4G165WE-BITD
- K4A4G165WE-BIRC
- K4A4G165WE-BIPB
- K4A4G165WE-BCWE
- K4A4G165WE-BCTD
- K4A4G165WE-BCRCT00
- K4A4G165WE-BCRC
- K4A4G165WE-BCPB
- K4A4G165WE
- K4A4G165WD-BCRCSLASHPB
- K4A4G165WD-BCRC/PB
- K4A4G165WD
- K4A4G085WF-BCWE
- K4A4G085WF
- K4A4G085WE-BITD
- K4A4G085WE-BIRC
- K4A4G085WE-BIPB
- K-4985
- K-4970
- K4970
- K-4959
- K-4942
- K-4931
- K-474
- K-473
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- K-470
- K4500
- K4212
- K41B0J
- K4145
- K4108
- K4107
- K4101
- K4100
- K40B4J
K4A60DA数据表相关新闻
K4A4G165WF-BCTD 是三星推出的一款 DDR4 动态随机存取存储器(DRAM)。
K4A4G165WF-BCTD 是三星推出的一款 DDR4 动态随机存取存储器(DRAM)。
2025-7-10K4A8G165WB-BCRC
K4A8G165WB-BCRC
2020-4-17K4A4G165WE-BCRC
K4A4G165WE-BCRC
2020-4-16K4A4G165WE-BCTD
K4A4G165WE-BCTD
2020-4-16K4B1G0846I-BYNB
K4B1G0846I-BYNB
2019-11-22K4B1G0846I-BYK0000
K4B1G0846I-BYK0000
2019-11-22
DdatasheetPDF页码索引
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