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型号 功能描述 生产厂家 企业 LOGO 操作

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • International Standard Packages • Low Intrinsic Gate Resistance • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Applications • DC-DC Converters • Battery Chargers • Switch-Mode and Resonan

IXYS

艾赛斯

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • International Standard Packages • Low Intrinsic Gate Resistance • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Applications • DC-DC Converters • Battery Chargers • Switch-Mode and Resonan

IXYS

艾赛斯

HiPerFAST IGBT

Features • International standard packages JEDEC TO-247 AD and surface mountable TO-247 SMD • High current handling capability • Newest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninte

IXYS

艾赛斯

HiPerFAST IGBT

Features • International standard packages JEDEC TO-247 AD and surface mountable TO-247 SMD • High current handling capability • Newest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninte

IXYS

艾赛斯

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast body diode • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request

MICROSEMI

美高森美

更新时间:2026-5-24 16:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
17+
TO-3P
6200
IXYS
24+
TO-247AD
37
IXYS
23+
TO247
7000
IXYS
22+
TO-3P
20000
公司只做原装 品质保障
IXYS(艾赛斯)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
IXYS
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
IXYS
14+
TO-3P
2
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IXYS
原厂封装
9800
原装进口公司现货假一赔百
IXYS/艾赛斯
23+
TO-3P
50000
全新原装正品现货,支持订货
IXYS
22+
TO2473
9000
原厂渠道,现货配单

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