N-CHANNEL SILICON POWER MOSFET

1. High speed switching\n2. Low on-resistance\n3. No secondary breadown\n4. Low driving power\n5. Avalanche-proof;

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.FEATURES\n· Low on-state resistance\nRDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A)\nRDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A)\nRDS(ON)3 = 20mΩ MAX (V · Low on-state resistance\nRDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A)\nRDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A)\nRDS(ON)3 = 20mΩ MAX (VGS=3.5V, IS=1.0A);

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. FEATURES • Low on-state resistance RDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A) RDS(ON)3

N CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Logic Plus™

文件：9.6955 Mbytes Page：19 Pages

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

Square Type

文件：31.46 Kbytes Page：1 Pages

Square Type

文件：32 Kbytes Page：1 Pages

LinCMOSE DUAL DIFFERENTIAL COMPARATOR

文件：140.77 Kbytes Page：9 Pages