Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. FEATURES • Low on-state resistance RDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A) RDS(ON)3

N CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-CHANNEL SILICON POWER MOSFET

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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