N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. FEATURES · Low on-state resistance RDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A) RDS(ON)3

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.FEATURES\n· Low on-state resistance\n   RDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A)\n   RDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A)\n   RDS(ON)3 = 20 · Low on-state resistance\n   RDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A)\n   RDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A)\n   RDS(ON)3 = 20mΩ MAX (VGS=3.5V, IS=1.0A) ;

包装：散装 描述：TERM BLOCK HDR 48POS VERT 3.5MM 连接器，互连器件 针座、插头和插座

包装：盒 描述：TERM BLOCK HDR 51POS 90DEG 3.5MM 连接器，互连器件 针座、插头和插座

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER

DESCRIPTION These circuits are high speed J–FET input single operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates,low input bias and offset currents, and low offset voltage temperatur

FAMILY OF JFET OPERATIONAL AMPLIFIERS

JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo

FAMILY OF JFET OPERATIONAL AMPLIFIERS

JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo

Silicon NPN Transistor RF Power Amp, Driver

Description: The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 25W Minimum

Square Type

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