Surface Mount Schottky Rectifier

Features ● Low profile package ● Ideal for automated placement ● Guardring for overvoltage protection ● Low power losses, high efficiency ● High forward surge capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

3.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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3.3V Crystal Clock Oscillators

THIS PRODUCT IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE REFER TO THE M3H PRODUCT SERIES. ♦ 4-pin Package, Compatible with 8-pin DIL ♦ 1.0MHz to 70MHz Frequency Range ♦ CMOS Compatible Tight Symmetry (45/55) Available ♦ Tri-State Option Available ♦ ±100ppm Stability Standard - K3500GC Tighter

3.3V Crystal Clock Oscillators

THIS PRODUCT IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE REFER TO THE M3H PRODUCT SERIES. ♦ 4-pin Package, Compatible with 8-pin DIL ♦ 1.0MHz to 70MHz Frequency Range ♦ CMOS Compatible Tight Symmetry (45/55) Available ♦ Tri-State Option Available ♦ ±100ppm Stability Standard - K3500GC Tighter

3.3V Crystal Clock Oscillators

THIS PRODUCT IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE REFER TO THE M3H PRODUCT SERIES. ♦ 4-pin Package, Compatible with 8-pin DIL ♦ 1.0MHz to 70MHz Frequency Range ♦ CMOS Compatible Tight Symmetry (45/55) Available ♦ Tri-State Option Available ♦ ±100ppm Stability Standard - K3500GC Tighter

3.3V Crystal Clock Oscillators

THIS PRODUCT IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE REFER TO THE M3H PRODUCT SERIES. ♦ 4-pin Package, Compatible with 8-pin DIL ♦ 1.0MHz to 70MHz Frequency Range ♦ CMOS Compatible Tight Symmetry (45/55) Available ♦ Tri-State Option Available ♦ ±100ppm Stability Standard - K3500GC Tighter

N-CHANNEL SILICON POWER MOSFET

■ Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof ■ Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

STM32VLDISCOVERY LCD Interface Expansion Board

The EB-STM32DISCOVERY-LCD is an extension board for the STM32VLDISCOVERY Development Board. The expansion board has build in LED backlight driver circuit and 60pin FPC connector for the Kentec LCDs (3.5 inch: K350QVG-V2-F; 4.3 inch: K430WQC-V3-FF; 5.0 inch: K50DWN2-V1-FF; 7.0 inch: K70DWN2-V1-FF;

EM-STM3210E LCD Interface Expansion Board (EB-STM3210E-LCD) User Guide

The EB-STM3210E-LCD is an extension board for the EM-STM3210E Development Board (see Figure 1). The expansion board has build in LED backlight driver circuit and 60pin FPC connector for the Kentec LCDs (3.5 inch: K350QVG-V2-F; 4.3 inch: K430WQC-V3-FF; 5.0 inch: K50DWN2-V1-FF; 7.0 inch: K70DWN2-V

EM-AT91SAM3U LCD

The EB-AT91SAM3U-LCD is an extension board for the EM-AT91SAM3U Development Board (see Figure 1). The expansion board has build in LED backlight driver circuit and 60pin FPC connector for the Kentec LCDs (3.5 inch: K350QVG-V2-F; 4.3 inch: K430WQC-V3-FF; 5.0 inch: K50DWN2-V1-FF; 7.0 inch: K70DWN2

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. FEATURES · Low on-state resistance RDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A) RDS(ON)3

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. FEATURES • Low on-state resistance RDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A) RDS(ON)3

N CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji Power MOSFET SuperFAP-G series Target Specification

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-CHANNEL SILICON POWER MOSFET

■ Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof ■ Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-CHANNEL SILICON POWER MOSFET

■ Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof ■ Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-Channel JFET

Features • Large | yfs | • Small Ciss • Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer • Ultralow noise figure Applications • AM tuner RF amplification • Low noise amplifier

IF Filter for Quasi/Split Sound Applications 38,00 MHz

Features ■ TV IF filter for quasi/split sound applications (separate picture and sound channel) ■ Picture channel with Nyquist slope and sound suppression, symmetrical output ■ Customized group delay predistortion ■ Sound channel with pass band for sound carriers between 31,5 MHz and 32,5 MHz

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) • High forward transfer admittance: |Yfs| = 2.6 S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 720 V) • Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

IF Filter for Quasi/Split Sound Applications 38,90 MHz

SAW Components IF Filter for Quasi/Split Sound Applications 38,90 MHz Features ■TV IF filter for quasi/split sound applications (separate picture and sound channel) ■Picture channel with Nyquist slope and sound suppression, symmetrical output ■Customized group delay predistorti

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type, π-MOSIV

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

IF Filter for Quasi/Split Sound Applications 38,90 MHz

SAW Components IF Filter for Quasi/Split Sound Applications 38,90 MHz Features ■TV IF filter for quasi/split sound applications (separate picture and sound channel) ■Picture channel with Nyquist slope and sound suppression, symmetrical output ■Customized group delay predistorti

Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS(ON)= 5.6Ω(typ.) • Highforward transferadmittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS= 100 μA (VDS= 720 V) • Enhancement-mode: Vth= 2.0~4.0 V (VDS = 10 V,ID= 1 mA)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Switching Regulator Applications. 2SK3567 -> Marking K3567. • Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.) • High forward transfer admittance: |Yfs| = 2.5 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 m

isc N-Channel MOSFET Transistor

·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS

isc N-Channel MOSFET Transistor

·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

LOW VF SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件：2.746378 Mbytes Page：8 Pages

High voltage lamp ignitors

文件：644.88 Kbytes Page：6 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages

8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator

文件：272.68 Kbytes Page：2 Pages