N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

DC-DC Converter, Relay Drive and Motor Drive Applications

1. Low drain-source ON resistance: RDS (ON)= 4.0 Ω(typ.) 2. High forward transfer admittance: Yfs= 0.6 S (typ.) 3. Low leakage current: IDSS= 100 µA (max) (VDS= 400 V) 4. Enhancement-model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1mA)

N-Channel 650 V (D-S) MOSFET

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FLAT WASHERS NYLON FIBRE

[KEYSTONE] NYLON RETAINING WASHERS FLAT WASHERS – NYLON & FIBRE INTERNAL TOOTH WASHERS STEEL LOCK WASHERS STEEL FLAT WASHERS

WASHERS

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An extensive range of premium quality, problem solving adapters including 1/4, XLR, RCA, DMX, BNC, 75/110 Ohm, impedance matching transformers, and much more.

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2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6

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2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6

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