TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. The AM3407 is available in SOT-23 package. FEATURES  VDS = -30V,ID =

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS= -30V VGS= ±20V ID(A)= -4.3A RDS(ON)=38mΩ(Typ.)@VGS=-10V RDS(ON)=58mΩ(Typ.)@VGS=-4.5V The AM3407A is available in SOT-23 package. FEATURES ⚫ Available in SOT-23 p ackage APPLICATION ⚫ Portable Equipment ⚫ Power Management ⚫ Load Switch

-4.1A竊?30V P-CHANNEL MOSFET

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Heyco® PG and Metric Threaded Plugs

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Heyco® PG and Metric Threaded Plugs

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