SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 760 pF TY

MOS Field Effect Transistor

Features • Low on-resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 m MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 760 pF TYP. • Built-in gate protection diode

N-Channel 60 V (D-S) MOSFET

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Low on-resistance

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짹15kV ESD-Protected, 1關A, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP

General Description The MAX3372E–MAX3379E and MAX3390E–MAX3393E ±15kV ESD-protected level translators provide the level shifting necessary to allow data transfer in a multivoltage system. Externally applied voltages, VCCand VL, set the logic levels on either side of the device. A low-voltage

짹15kV ESD-Protected, 1關A, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP

General Description The MAX3372E–MAX3379E and MAX3390E–MAX3393E ±15kV ESD-protected level translators provide the level shifting necessary to allow data transfer in a multivoltage system. Externally applied voltages, VCCand VL, set the logic levels on either side of the device. A low-voltage

±15kV ESD-Protected, 1μA, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP

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P-Channel Silicon MOSFET General-Purpose Switching Device Applications

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GENERAL PURPOSE AMPLIFIER

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