Silicon N Channel MOS FET / High Speed Power Switching

•  Low on-resistance: RDS(on)= 0.3 Ωtyp.\n•  Low leakage current: IDSS = 1 µA max (at VDS = 500 V)\n•  High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)\n•  Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A)\n•  Avalanche ratings

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

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