Optocoupler with Phototriac Output

Description The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance be tween input and output for

Optocoupler, Phototriac Output, 400 VDRM

FEATURES • 400 V blocking voltage • Isolation test voltage, 5300 VRMS, t = 1 s • Isolation materials per UL94 • Compliant to RoHS directive to 2002/95/EC and in accordance WEEE 2002/96/EC APPLICATIONS • High current triac driver • Solid state relay • Switch small AC loads

Optocoupler, Phototriac Output, 400 V VDRM

文件：196.07 Kbytes Page：10 Pages

Optocoupler, Phototriac Output, Non-Zero Crossing

文件：152.69 Kbytes Page：7 Pages

三极与 SCR 输出光电耦合器 Phototriac Output

Optocoupler, Phototriac Output, Non-Zero Crossing, 400 VDRM

• 400 V blocking voltage • Wide range of trigger current • 100 mARMS on-state current • Wide temperature range -55 °C to +100 °C

Optocoupler with Phototriac Output

Description The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance be tween input and output for

Optocoupler, Phototriac Output, 400 VDRM

FEATURES • 400 V blocking voltage • Isolation test voltage, 5300 VRMS, t = 1 s • Isolation materials per UL94 • Compliant to RoHS directive to 2002/95/EC and in accordance WEEE 2002/96/EC APPLICATIONS • High current triac driver • Solid state relay • Switch small AC loads

三极与 SCR 输出光电耦合器 Phototriac Output Non-Zero Crossing

Optocoupler, Phototriac Output, 400 V VDRM

文件：196.07 Kbytes Page：10 Pages

Optocoupler, Phototriac Output, Non-Zero Crossing

文件：152.69 Kbytes Page：7 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

NPN SILICON UHF POWER TRANSISTOR

The TP3022B is designed for common–emitter operation in the 900 MHz mobile radio band. Use of gold metallization and silicon diffused ballast resistors results in a medium power output/driver transistor with state–of–the–art ruggedness and reliability. • Specified 26 Volts, 960 MHz Characteristic

NPN SILICON UHF POWER TRANSISTOR

The TP3022B is designed for common–emitter operation in the 900 MHz mobile radio band. Use of gold metallization and silicon diffused ballast resistors results in a medium power output/driver transistor with state–of–the–art ruggedness and reliability. • Specified 26 Volts, 960 MHz Characteristic

6-Pin DIP Random-Phase Optoisolators Triac Driver Output

文件：299.43 Kbytes Page：6 Pages

60 Voice smart with LCD

文件：112.48 Kbytes Page：1 Pages