丝印代码：K2915；N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 0.31 Ω (typ.) ● High forward transfer admittance : |Yfs| = 15 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID

丝印代码：K2915；Silicon N Channel MOS Type opper Regulator, DC−DC Converter and Motor Drive Applications

文件：747.4 Kbytes Page：6 Pages

丝印代码：K2915；Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件：441.04 Kbytes Page：6 Pages

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 0.31 Ω (typ.) ● High forward transfer admittance : |Yfs| = 15 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain–source ON resistance : RDS (ON) = 0.21 Ω (typ.) ● High forward transfer admittance : |Yfs| = 17 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID

Power MOSFET

N-channel enhancement mode power MOSFET / TO-220

Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件：441.04 Kbytes Page：6 Pages

Silicon N Channel MOS Type opper Regulator, DC−DC Converter and Motor Drive Applications

文件：747.4 Kbytes Page：6 Pages

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Silicon Complementary Transistors Medium Power Amp, Switch

Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high–fide