TRENCHSTOP SERIES

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D • Short circuit withstand time – 10µs • Designed for : - Frequency Converters - Uninterrupted Power

IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode

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Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.4V@IC=25A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC=25A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

IGBT - Power, Single, N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L 1200 V, 1.38 V, 25 A

Description Using the novel field stop 7th generation IGBT technology in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Effic

IGBT - Power, Co-PAK, N-Channel, Field Stop VII, (FS7), SCR, Power TO247-3L 1200 V, 1.38 V, 25 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features

1200 V, 25 A Field Stop Trench IGBT

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