丝印代码：K251；Very high accuracy (5 μV) high bandwidth (10 MHz) zero drift 5 V op amp

Features • Very high accuracy and stability: offset voltage – 5 μV max. at 25 °C – 8 μV over the full temperature range (-40 °C to 125 °C) • Rail-to-rail input and output • Low supply voltage: 2.5 - 5.5 V • Low power consumption: 1.5 mA at 5 V • Gain-bandwidth product: 10 MHz • AEC-Q100 au

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThe 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n• Low On-Resistance\nRDS (on)1= 15 mΩ(VGS= 10 V, ID= 23 A)\nRDS (on)2= 23 mΩ(VGS= 4 V, ID= 23 A)\n• Low CissCiss= 2 100 pF TYP.\n• Built-in G-S Protection Diode • Low On-Resistance\nRDS (on)1= 15 mΩ(VGS= 10 V, ID= 23 A)\nRDS (on)2= 23 mΩ(VGS= 4 V, ID= 23 A)\n• Low CissCiss= 2 100 pF TYP.\n• Built-in G-S Protection Diode;

PNP video transistor

DESCRIPTION PNP video transistor in a SOT54 (TO-92) plastic package. NPN complement: BFQ231. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Buffer/driver in high

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

Ultra Bright GaAIAs Lamps

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Ultra Bright GaAIAs Lamps

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Square Type

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