MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDESCRIPTION\nThe 2SK2487 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.\nFEATURES\n• Low On-Resistance RDS (on)= 1.6 Ω(VGS= 10 V, ID= 4.0 A)\n• Low CissCiss= 2 100 pF TYP.\n• High Avalanche Capability Ratings • Low On-Resistance RDS (on)= 1.6 Ω(VGS= 10 V, ID= 4.0 A)\n• Low CissCiss= 2 100 pF TYP.\n• High Avalanche Capability Ratings;

3.0 GHz - 6.0 GHz High Performance Delta-Sigma Low Power Dual PLLatinum??Frequency Synthesizers with 3.0 GHz Integer PLL

文件：862.75 Kbytes Page：37 Pages

3.0 GHz - 6.0 GHz High Performance Delta-Sigma Low Power Dual PLLatinum??Frequency Synthesizers with 3.0 GHz Integer PLL

文件：862.75 Kbytes Page：37 Pages

3.0 GHz - 6.0 GHz High Performance Delta-Sigma Low Power Dual PLLatinum??Frequency Synthesizers with 3.0 GHz Integer PLL

文件：862.75 Kbytes Page：37 Pages

16-Bit 2-/4-Channel ADC with PGA, Easy Drive and I2C Interface

文件：672.04 Kbytes Page：32 Pages

16-Bit 2-/4-Channel ADC with PGA, Easy Drive and I2C Interface

文件：672.04 Kbytes Page：32 Pages