SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK2461isN-ChannelMOSFieldEffectTransistordesignedforhighspeedswitchingapplications. FEATURES •LowOn-Resistance RDS(on)1=80mΩMAX.(@VGS=10V,ID=10A) RDS(on)2=0.1ΩMAX.(@VGS=4V,ID=10A) •LowCissCiss=1400pFTYP. •Built-inG-SGa

NCHANNELJUNCTIONTYPE(FORCONSTANTCURRENT,IMPEDANCECONVERTERANDDC-ACHIGHINPUTIMPEDANCEAMPLIFIERCIRCUITAPPLICATIONS)

ForConstantCurrent,ImpedanceConverterandDC-ACHighInputImpedanceAmplifierCircuitApplications
Highbreakdownvoltage:VGDS=−50V
Highinputimpedance:IGSS=−1nA(max)(VGS=−30V)

Smallswitching(60V,2A)

●Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive(4V). 5)Easilydesigneddrivecircuits. 6)Easytoparallel.

SiliconSpreadingResistanceTemperatureSensorinMiniatureLeadedPlasticPackage

Features •TemperaturedependentResistorwithPositiveTemperatureCoefficient •Miniatureplasticpackageforverysmallthermaltimeconstants •Fastresponse •Highreliabilityduetomultilayergoldcontacts •n-conductingsiliconcrystal •Polarityindependentduetosymmetricalconstr

N-channelMOS-FET

Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

Ultrahigh-SpeedSwitchingApplications

Features ·LowONresistance. ·Ultrahigh-speedswitching. ·Enablessimplifiedfabrication,high-densitymounding,andminiaturizationinendproductsduetothesurfacemountablepackage.

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK2461isN-ChannelMOSFieldEffectTransistordesignedforhighspeedswitchingapplications. FEATURES •LowOn-Resistance RDS(on)1=80mΩMAX.(@VGS=10V,ID=10A) RDS(on)2=0.1ΩMAX.(@VGS=4V,ID=10A) •LowCissCiss=1400pFTYP. •Built-inG-SGa

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK2462isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •LowOn-Resistance RDS(on)1=0.14ΩMAX.(@VGS=10V,ID=8.0A) RDS(on)2=0.17ΩMAX.(@VGS=4V,ID=8.0A)

NCHANNELMOSTYPE(HIGHSPEED,HIGHVOLTAGESWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

文件：295.19 Kbytes Page：5 Pages

AluminumElectrolyticCapacitorsSMD(Chip),HighTemperature,LowImpedance,HighVibrationCapability

FEATURES •Extendedusefullife:upto6000hat125°C •Polarizedaluminumelectrolyticcapacitors, non-solidelectrolyte,selfhealing •SMD-versionwithbaseplate,lead(Pb)-free reflowsolderable •Chargeanddischargeproof,nopeakcurrentlimitation •Advancedtemperaturereflowso

AluminumElectrolyticCapacitorsRadial,HighTemperature,LowImpedance,HighVibrationCapability

FEATURES •Verylongusefullife:4000hto6000hat 125°C •Highstability,highreliability •VerylowESR •AEC-Q200qualified •Excellentripplecurrentcapability •Highvibrationresistanceupto50g •Polarizedaluminumelectrolyticcapacitors, non-solidelectrolyte •Radialle

PowerSupplyReadouts

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AluminumElectrolyticCapacitors

文件：135.72 Kbytes Page：10 Pages

AluminumElectrolyticCapacitors

文件：120.51 Kbytes Page：8 Pages