N-channel MOS-FET

Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof

THINKI 150 Watt Silicon Epitaxial Planar PNP Power Transistor

DESCRIPTION ·With TO-3PN-SQ package ·Complement to type C5200N APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

Power Amplifier Applications

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Improving the Performance of the MAX4455 by Reducing On-Screen Display Artifacts

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