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型号 功能描述 生产厂家 企业 LOGO 操作
K1807

Silicon N-Channel MOS FET

• Low on-resistance\n• Low drive current\n• Suitable for switchingregulator, DC-DC converterApplication\nHigh speed power switching\n ;

HITACHIHitachi Semiconductor

日立日立公司

1.8 GHz POWER AMPLIFIER AND TRANSMIT/RECEIVE SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT

Designed primarily for use in DECT, Japan Personal Handy System (PHS) and other wireless Personal Communication Systems (PCS) applications. The MRFIC1807 includes a single–stage power amplifier and transmit/receive switch in a low–cost SOIC–16 package. The amplifier portion employs a depletion mod

MOTOROLA

摩托罗拉

3/ 6/ 9/ 12 / 15 / 18 VOICE ROM

Description The MSSnn07 is a single-chip CMOS VLSI ROM that can memorize voice data up to nn seconds using MOSEL qualified coding method (5-bit MPCM) at 6.00 KHz in 32 sections with arbitrary length. Both the volume and pitch can be masked and different for each entry each sentence. 5 versatile

MOSEL

茂矽电子

18 Voice VROM

Description The MSSnn07 is a single-chip CMOS VLSI ROM that can memorize voice data up to nn seconds using MOSEL qualified coding method (5-bit MPCM) at 6.00 KHz in 32 sections with arbitrary length. Both the volume and pitch can be masked and different for each entry each sentence. 5 versatile

MOSEL

茂矽电子

Integrated Circuit Head Amplifier Circuit for 2 Head VCR

Features: • Built–in Peaking Amplifier Circuit • Less Noise Voltage Referred to Input: 1µVrms

NTE

Programmable Maximum Duty Cycle PWM Controller

文件:314.18 Kbytes Page:11 Pages

TI

德州仪器

更新时间:2026-5-23 16:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI
15+
50
全新 发货1-2天

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