N-Channel Silicon Power Mos-fet(F-II Series)

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

Drain Current ?밒D=9A@ TC=25C

DESCRIPTION • Drain Current –ID=9A@ TC=25℃ • Drain Source Voltage- : VDSS=600 (Min) APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and col

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and col

LATERAL NCHANNEL BROADBAND RF POWER MOSFET

The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. • Specified Performance @ 520

3/ 6/ 9/ 12 / 15 / 18 VOICE ROM

Description The MSSnn07 is a single-chip CMOS VLSI ROM that can memorize voice data up to nn seconds using MOSEL qualified coding method (5-bit MPCM) at 6.00 KHz in 32 sections with arbitrary length. Both the volume and pitch can be masked and different for each entry each sentence. 5 versatile

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor High breakdown voltage and for low noise amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.