Field Effect Transistor Silicon N Channel MOS Type (L2−pai-MOSIII) Relay Drive, Motor Drive and DC−DC Converter

Relay Drive, Motor Drive and DC−DC Converter Applications ● 4-V gate drive ● Low drain−source ON-resistance : RDS (ON) = 25 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 33 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) ● Enhancement mode : Vth = 0.8 to 2.0 V (VDS

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

1 5/16 (33.3 mm) Industrial Single Turn, Bushing Mount, Conductive Plastic Potentiometer

FEATURES • Center tap available • Continuous rotation and mechanical stops both standard • Suitable model for all types of industrial applications • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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