丝印代码：K133；High Driver Regulator

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Silicon N-Channel MOS FET

•  Low on-resistance\n•  High speed switching\n•  Low drive current\n•  No secondary Breakdown\n•  Suitable for switching regulator and DC-DC converter

Silicon N-Channel MOS FET / TO-92 Package

•  Low on-resistance\n\n•  High speed switching\n\n•  Low drive current\n\n•  4 V gate drive device\n- Can be driven from 5 V source\n\n•  Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Multilayer Chip Capacitors

文件：323.06 Kbytes Page：17 Pages

Multilayer Chip Capacitors

文件：323.06 Kbytes Page：17 Pages

Multilayer Chip Capacitors

文件：323.06 Kbytes Page：17 Pages

Multilayer Chip Capacitors

文件：323.06 Kbytes Page：17 Pages

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

3-Ampere Adjustable Negative Regulators

文件：268.49 Kbytes Page：10 Pages

3-Ampere Adjustable Negative Regulators

文件：268.49 Kbytes Page：10 Pages