MICRO SWITCH™ SM Series Premium Subminiature Basic Switches

Features and Benefits LONG LIFE With a mechanical life of up to 10,000,000 operations, SM Series switches boast an industry-leading life cycle. APPLICATION FLEXIBILITY MICRO SWITCH™ SM Series delivers a selection of actuation, electrical termination, and operating characteristics along with hi

包装：散装 描述：LEVER ROLLER FOR LIMIT SWITCH 开关 配件

开关配件/盖帽

Interactive Catalog Replaces Catalog Pages

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Interactive Catalog Replaces Catalog Pages

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Interactive Catalog Replaces Catalog Pages

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Interactive Catalog Replaces Catalog Pages

文件：231.14 Kbytes Page：7 Pages

Basic Switches Subminiature

文件：375.04 Kbytes Page：7 Pages

Interactive Catalog Replaces Catalog Pages

文件：231.14 Kbytes Page：7 Pages

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

PNP video transistor

DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B