JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

JFE150 Ultra-Low Noise, Low Gate Current, Audio, N-Channel JFET

文件：1.86478 Mbytes Page：25 Pages

超低噪声、低栅极电流、音频、N 沟道 JFET

JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

JFE150 Ultra-Low Noise, Low Gate Current, Audio, N-Channel JFET

文件：1.86478 Mbytes Page：25 Pages

JFE150 Ultra-Low Noise, Low Gate Current, Audio, N-Channel JFET

文件：1.86478 Mbytes Page：25 Pages

封装/外壳：5-TSSOP，SC-70-5，SOT-353 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ULTRA-LOW NOISE, LOW GATE CURREN 分立半导体产品 晶体管 - JFET

功能：前置放大器 包装：盒 描述：JFE150 EVALUATION MODULE, -40-VG 开发板，套件，编程器 评估和演示板及套件

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

MINIATURE FUSES - 5x15 mm

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Limiting continuous current 130A at 85째C

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Easy Identification and Tracing with 10-color Cable

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INTERCONNECT BATTERY HOLDERS

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