位置：首页 > IC中文资料第3529页 > JF1195G
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. | CET 华瑞 |   | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. | CET 华瑞 | | ||
Miniature Slip Ring - 12mm diameter, 12 wires, max 240V @ 2A 文件：210.61 Kbytes Page：2 Pages | Adafruit | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.24964 Mbytes Page：4 Pages | DOINGTER 杜因特 | |
JF1195G产品属性
- 类型
描述
- 型号
JF1195G
- 制造商
Calogic LLC
- 功能描述
JF1195 Series Junction Field Effect Transistor - T0-92
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
24+ |
NA/ |
3444 |
原装现货,当天可交货,原型号开票 |
|||
CET |
25+ |
TO-220F |
17 |
原装正品,假一罚十! |
|||
CET/華瑞 |
10+ |
TO-220F |
194 |
||||
CET/華瑞 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
CET |
25+23+ |
TO-220 |
28598 |
绝对原装正品全新进口深圳现货 |
|||
CET |
23+ |
TO-220F |
6000 |
原装正品，支持实单 |
|||
CET/華瑞 |
20+ |
TO-220F |
32500 |
现货很近!原厂很远!只做原装 |
|||
CET |
14+ |
TO-220F |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET/華瑞 |
2022+ |
TO-220F |
376 |
原厂代理 终端免费提供样品 |
|||
FH/风华高科 |
24+ |
N/A |
80000 |
公司现货库存,支持实单 |
JF1195G规格书下载地址
JF1195G参数引脚图相关
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DdatasheetPDF页码索引
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