SILICON 500mA LOW NOISE ZENER DIODES

• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 50

500mW LOW NOISE SILION ZENER DIODES

VOLTAGE RANGE 1.8 to 100 Volts FEATURES * Zener voltage 1.8 to 100 V * Low noise * Low reverse leakage

LOW LEVEL ZENER DIODES LOW CURRENT: 250關A - LOW NOISE

1. Package Style DO-7 2. Vz tolerance: ± 5 3. Forward Voltage (VF) Maximum 1.0 Vdc (1N4614 – 1N4627 IF = 100 mA; 1N4099 – 1N4121 IF = 200 mA) 4. Noise Density measured from 1000 to 3000 Hz. 5. MILITARY SCREENING AVAILABLE

500mW Low Noise Zener Diodes

Features •Low Current Operation at 250µA •Low Reverse Leakage •Low Noise Characteristics •Metallurgically Bonded •High temperature soldering guaranteed: 260˚C/10 seconds •RoHS Compliant

LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS

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