位置：首页 > IC中文资料第3400页 > JANTXV1N5524B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
JANTXV1N5524B | LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  |   |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 |  | | |
封装/外壳：DO-213AA（玻璃） 包装：散装 描述：DIODE ZENER 5.6V 500MW DO213AA 分立半导体产品 二极管 - 齐纳 - 单 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | | | |
LowVoltageAvalanche500mWZenerDiodesDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 |  | | |
LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom | KNOX Knox Semiconductor, Inc |  | | |
LOWVOLTAGEAVALANCHEDIODESDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
JANTXV1N5524B产品属性
- 类型
描述
- 型号
JANTXV1N5524B
- 制造商
MILITARY SPECIFICATIONS P
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROSEMI |
三年内 |
1983 |
只做原装正品 |
||||
MICROSEMI |
638 |
原装正品 |
|||||
MICROCHIP(美国微芯) |
24+ |
DO213AA |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
MICROSEMI |
1809+ |
DO-213 |
326 |
就找我吧!--邀您体验愉快问购元件! |
JANTXV1N5524B芯片相关品牌
JANTXV1N5524B规格书下载地址
JANTXV1N5524B参数引脚图相关
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JANTXV1N5524B数据表相关新闻
JANTX1N755AUR-1
进口代理
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全新原装进口，质量保证，宇集芯您放心的品质，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-13JANTXV1N6515FL QPL二极管
VMI是高压二极管，乘法器，光耦合器，整流器和高压电源的制造商。VMI（VmiVoltagemultipliersinc）1980年11月成立，专门生产高压二极管和超高压二极管，鉴于需要专门开发VMI高压产品，VMI在提供高压二极管，倍增器，光电二极管，陶瓷电容器和紧凑型高压电源方面拥有20多年
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JANTXV1N4135-1Microchip稳压二极管
2020-11-23JANTXV1N6523进口原装正品
VMI高压二极管JANTXV1N6523
2020-9-21JANTX2N2324AS，ISPLSI2064-100LT，ISPLSI2032E-180LT48，ISPLSI2032LV-80LT44，ISPLSI2032V-100LJ44，ISPLSI2032V-100LT44，ISPLSI2032A-135L44，ISPLSI2032-80LT，ISPLSI1032E-90L
JANTX2N2324AS，ISPLSI2064-100LT，ISPLSI2032E-180LT48，ISPLSI2032LV-80LT44，ISPLSI2032V-100LJ44，ISPLSI2032V-100LT44，ISPLSI2032A-135L44，ISPLSI2032-80LT，ISPLSI1032E-90L
2020-1-1
DdatasheetPDF页码索引
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