POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.60ohm, Id=3.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (TO-205AF) The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-stat

Repetitive Avalanche Ratings

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High-Reliability Transistors

HiRel MOSFETs

HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS SURFACE MOUNT (LCC-18) The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers

Repetitive Avalanche Ratings

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High-Reliability Transistors

N-CHANNEL MOSFET

DESCRIPTION This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numerous other transistor products to

N-CHANNEL POWER MOSFET

APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES

N-CHANNEL POWER MOSFET ENHANCEMENT MODE

APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES

N?밅HANNEL POWER MOSFET ENHANCEMENT MODE

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N-CHANNEL MOSFET

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