TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=1.00ohm, Id=5.5A)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.00ohm, Id=5.5A)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

Repetitive Avalanche Ratings

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High-Reliability Transistors

HiRel MOSFETs

Repetitive Avalanche Ratings

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VGS Rated at 짹20V

DESCRIPTION • VGS Rated at ±20V • Silicon Gate for fast switching speeds • IDSS 、RDS(ON) ,specified at elevated temperature • Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy

N-CHANNEL MOSFET

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542

N-CHANNEL MOSFET

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542

N-Channel Power MOSFETs, 5.5A, 350V/400V

Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.

N-CHANNEL POWER MOSFET

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