POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9A)

200 Volt, 0.40Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis tors. The efficient geometry achieves very low on state resistance combined with high transconductance. HEXFET transistors also feature all of the well-es tablish advantag

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

200 Volt, 0.40Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis tors. The efficient geometry achieves very low on state resistance combined with high transconductance. HEXFET transistors also feature all of the well-es tablish advantag

Repetitive Avalanche Ratings

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Repetitive Avalanche Ratings

文件：151.04 Kbytes Page：7 Pages

N-Channel Power MOSFETs, 9A, 150V/200V

Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.

N-CHANNEL MOSFET

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542

VGS Rated at 짹20V

DESCRIPTION • VGS Rated at ±20V • Silicon Gate for fast switching speeds • IDSS 、RDS(ON) ,specified at elevated temperature • Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy