LOW POWER NPN SILICON TRANSISTOR

LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391

封装/外壳：TO-205AA，TO-5-3 金属罐 包装：散装 描述：TRANS NPN 80V 1A TO5 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

LOW POWER NPN SILICON TRANSISTOR

LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391

封装/外壳：TO-205AA，TO-5-3 金属罐 包装：散装 描述：SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN medium power transistor

DESCRIPTION NPN medium power transistor in a TO-39 metal package. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Amplifier and switching circuits.

HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS

DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

Chip Type 2C3019 Geometry 4500 Polarity PNP

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

NPN SILICON PLANAR TRANSISTOR

NPN Silicon Planar Transistor 2 N 3019 is an epitaxial NPN silicon planar transistor in TO 39 case (6 C 3 DIN 41873). The collector is electrically connected to the case. The transistor is particularly suitable for use in Af amplifiers and for AF switching applications.

NPN SILICON TRANSISTOR

文件：17.62 Kbytes Page：2 Pages