Disconnectable Crimp style connectors(Wire-to-board/Wire-to-wire)

Features–––––––––––––––––––––––– •Double-springconstruction Forsuperiorcontactreliability,thereceptaclecontacthasa double-springconstructionconsistingofamainspringanda contactpressureadjustmentspring. Inaddition,aspringstopperisincorporatedintheconnectorto fac

Disconnectable Crimp style connectors(Wire-to-board/Wire-to-wire)

Features–––––––––––––––––––––––– •Double-springconstruction Forsuperiorcontactreliability,thereceptaclecontacthasa double-springconstructionconsistingofamainspringanda contactpressureadjustmentspring. Inaddition,aspringstopperisincorporatedintheconnectorto fac

Disconnectable Crimp style connectors(Wire-to-board/Wire-to-wire)

Features–––––––––––––––––––––––– •Double-springconstruction Forsuperiorcontactreliability,thereceptaclecontacthasa double-springconstructionconsistingofamainspringanda contactpressureadjustmentspring. Inaddition,aspringstopperisincorporatedintheconnectorto fac

Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??

○PowerManagementSwitchApplications •1.5-Vdrive •LowON-resistance:RDS(ON)=242mΩ(max)(@VGS=-1.5V) RDS(ON)=170mΩ(max)(@VGS=-1.8V) RDS(ON)=125mΩ(max)(@VGS=-2.5V)

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application

CurrentResonanceInverterSwitchingApplication •Enhancementmodetype •Highspeed:tf=0.19µs(typ.)(IC=50A) •Lowsaturationvoltage:VCE(sat)=1.9V(typ.)(IC=50A) •FRDincludedbetweenemitterandcollector •FourthgenerationIGBT •TO-3P(N)(Toshibapackagename)

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：386.58 Kbytes Page：6 Pages

High-Performance, Green Storage

文件：1.29471 Mbytes Page：2 Pages

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：347.1 Kbytes Page：6 Pages

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

文件：232.15 Kbytes Page：6 Pages

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：344.45 Kbytes Page：6 Pages

包装：散装 描述：CIRCUIT BREAKER 电路保护 断路器

包装：散装 描述：CIRCUIT BREAKER 电路保护 断路器