N-channel field-effect transistors

• High speed switching • Interchangeability of drain and source connections • High impedance. N-channel symmetrical junction field-effect transistor in a TO-92 (SOT54) package.

N-Channel RF Amplifier

N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process 90.

PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

N-Channel JFET

DESCRIPTION The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage, typically under 2 pA, low noise, under 10 nano volts per square hertz at 10 hertz and high gain. This series is excellent for

GENERAL PURPOSE AMPS

GENERAL PURPOSE AMPS

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Audio Amplifiers ● General Purpose Amplifiers

LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER

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N-Channel RF Amplifier

文件：690.03 Kbytes Page：9 Pages

LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER

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Linear Systems replaces discontinued Siliconix J211

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR） 描述：JFET N-CH 25V 20MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：JFET N-CH 25V 20MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-CHANNEL JFET

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N-CHANNEL JFET

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N-Channel RF Amplifier

文件：690.03 Kbytes Page：9 Pages

Shuguang Vacuum Tube 211

DESCRIPTION Directed heat cathode, 211 triode can be used in class A, B, C amplifying stage. 211 vacuum tube is compatible with GL-211, UV-211 and can be replaced each other.

Premier Supplier of Electronic Hardware

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Direct replacement for T3 쩌 Midget Edison Screw E10

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Modular Radio Telemetry System

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M8 Female 4 Pin Field Attachable

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