N-Channel Switch

Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers • Sourced from Process 51. • Source & Drain are interchangeable.

丝印代码：AJ113；N-Channel Switch

Features • This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers • Sourced from Process 51 • Source & Drain are Interchangeable • These are Pb−Free Devices

N-channel silicon field-effect transistors

DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDS on at zero gate voltage

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Choppers ● Commutators ● Analog Switches

SINGLE N-CHANNEL JFET

FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns

N-Channel JFET Switch

FEATURES • Low Cost • Automated Insertion Package • Low Insertion Loss • No Offset or Error Voltage Generated By Closed Switch - Purely Resistive - High Isolation Resistance From Driver • Fast Switching • Short Sample and Hold Aperture Time APPLICATIONS • Analog Switches • Chopper

PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS

J111, J112, J113 are N-channel silicon junction field effect transistors designed for analog switching, choppers and commutators applications.

N-channel silicon field-effect transistors

DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDS on atzero Qate voltage

Linear Systems replaces discontinued Siliconix J113

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JFET Chopper Transistors

N-Channel JFET Switch

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：JFET N-CH 35V 625MW TO92-3 分立半导体产品 晶体管 - JFET

N-Channel JFETs

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N-Channel Switch

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This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers

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PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

丝印代码：AJ113；N-Channel Switch

Features • This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers • Sourced from Process 51 • Source & Drain are Interchangeable • These are Pb−Free Devices

JFET N-CH 40V 400MW TO92-3

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：JFET N-CH 35V 625MW TO92 分立半导体产品 晶体管 - JFET

N-CHANNEL JFET

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功率继电器

This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers

文件：157.1 Kbytes Page：6 Pages

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

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