Power MOSFET ISOPLUS220TM

Electrically Isolated Back Surface

N-Channel Enhancement Mode

High dv/dt, Low trr, HDMOSTM Family

Features

• Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

• Low drain to tab capacitance(<35pF)

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC motor control

Advantages

• Easy assembly: no screws or isolation

foils required

• Space savings

• High power density

• Low collector capacitance to ground

(low EMI)