N-Channel Enhancement Mode

Avalanche Rated, Low Qg, High dv/dt

Features

● Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

● Low drain to tab capacitance(<30pF)

● Low RDS(on) HDMOSTM process

● Rugged polysilicon gate cell structure

● Rated for Unclamped Inductive Load Switching (UIS)

● Fast intrinsic Rectifier

Applications

● DC-DC converters

● Battery chargers

● Switched-mode and resonant-mode power supplies

● DC choppers

● AC motor control

Advantages

● Easy assembly

● Space savings

● High power density