HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Backside)

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low trr

Features

• Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

• Low drain to tab capacitance(<30pF)

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Rated for Unclamped Inductive Load Switching (UIS)

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode power supplies

• DC choppers

• AC motor control

Advantages

• Easy assembly

• Space savings

• High power density