N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low trr

Low Gate Charge and Capacitances

Features

• Low gate charge

• International standard packages

• EpoxymeetUL94V-0, flammability classification

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Avalanche energy and current rated

• Fast intrinsic Rectifier

Advantages

• Easy to mount

• Space savings

• High power density