HiPerRF™ Power MOSFETs

F-Class: MegaHertz Switching

N-Channel Enhancement Mode

Avalanche Rated, Low Qg, Low Intrinsic Rg

High dV/dt, Low trr

Features

● RF capable Mosfets

● Rugged polysilicon gate cell structure

● Double metal process for low gate

resistance

● Unclamped Inductive Switching (UIS)

rated

● Low package inductance

- easy to drive and to protect

● Fast intrinsic rectifier

Applications

● DC-DC converters

● Switched-mode and resonant-mode

power supplies, >500kHz switching

● DC choppers

● Pulse generation

● Laser drivers

Advantages

● PLUS 247TMpackage for clip or spring

mounting

● Space savings

● High power density