位置:IS46LR32160D-4BLA2 > IS46LR32160D-4BLA2详情

IS46LR32160D-4BLA2中文资料

厂家型号

IS46LR32160D-4BLA2

文件大小

2966.5Kbytes

页面数量

47

功能描述

4M x 32Bits x 4Banks Mobile DDR SDRAM

数据手册

下载地址一下载地址二

生产厂商

ISSI

IS46LR32160D-4BLA2数据手册规格书PDF详情

Features

• JEDEC standard 1.8V power supply.

• VDD = 1.8V, VDDQ = 1.8V

• Four internal banks for concurrent operation

• MRS cycle with address key programs

- CAS latency 2, 3 (clock)

- Burst length (2, 4, 8, 16)

- Burst type (sequential & interleave)

• Fully differential clock inputs (CK, /CK)

• All inputs except data & DM are sampled at the rising

edge of the system clock

• Data I/O transaction on both edges of data strobe

• Bidirectional data strobe per byte of data (DQS)

• DM for write masking only

• Edge aligned data & data strobe output

• Center aligned data & data strobe input

• 64ms refresh period (8K cycle)

• Auto & self refresh

• Concurrent Auto Precharge

• Maximum clock frequency up to 250MHZ

• Maximum data rate up to 500Mbps/pin

• Power Saving support

- PASR (Partial Array Self Refresh)

- Auto TCSR (Temperature Compensated Self Refresh)

- Deep Power Down Mode

- Programmable Driver Strength Control by Full Strength

or 3/4, 1/2, 1/4, 1/8 of Full Strength

• Status Register Read (SRR)

• LVCMOS compatible inputs/outputs

• Packages:

- 90-Ball BGA

更新时间:2025-12-4 16:50:00
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89630
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