FEATURES

• DDP (Dual Die Package) with 2 x 2Gb LPDDR2

• Low-voltage Core and I/O Power Supplies

VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V,

VDD1 = 1.70-1.95V

• High Speed Un-terminated Logic(HSUL_12) I/O

Interface

• Clock Frequency Range : 10MHz to 533MHz

(data rate range : 20Mbps to 1066Mbps per I/O)

• Four-bit Pre-fetch DDR Architecture

• Multiplexed, double data rate, command/address inputs

• Eight internal banks for concurrent operation

• Bidirectional/differential data strobe per byte of

data (DQS/DQS#)

• Programmable Read/Write latencies(RL/WL)

and burst lengths(4,8 or 16)

• ZQ Calibration

• On-chip temperature sensor to control self refresh rate

• Partial –array self refresh(PASR)

• Deep power-down mode(DPD)

• Operation Temperature

Commercial (TC = 0°C to 85°C)

Industrial (TC = -40°C to 85°C)

Automotive, A1 (TC = -40°C to 85°C)

Automotive, A2 (TC = -40°C to 105°C)

Automotive, A25 (TC = -40°C to 115°C)(3)

OPTIONS

• Configuration:

− 128Mx32 (16M x 32 x 8 banks)

Green Package:

− 134-ball BGA

− 168-ball PoP BGA

DESCRIPTION

The IS43/46LD32128B is 4Gbit CMOS LPDDR2

DRAM. The device is organized as 8 banks of 16Meg

words of 32bits. This product uses a double-datarate architecture to achieve high-speed operation.

The double data rate architecture is essentially a

4N prefetch architecture with an interface designed

to transfer two data words per clock cycle at the I/O

pins. This product offers fully synchronous operations

referenced to both rising and falling edges of the clock.

The data paths are internally pipelined and 4n bits

prefetched to achieve very high bandwidth.