位置:IS42VM16200D-75BLI > IS42VM16200D-75BLI详情

IS42VM16200D-75BLI中文资料

厂家型号

IS42VM16200D-75BLI

文件大小

805.28Kbytes

页面数量

34

功能描述

1M x 16Bits x 2Banks Low Power Synchronous DRAM

数据手册

原厂下载下载地址一下载地址二

生产厂商

ISSI

IS42VM16200D-75BLI数据手册规格书PDF详情

Features

• JEDEC standard 3.3V, 2.5V, 1.8V power supply

• Auto refresh and self refresh

• All pins are compatible with LVCMOS interface

• 4K refresh cycle / 64ms

• Programmable Burst Length and Burst Type

- 1, 2, 4, 8 or Full Page for Sequential Burst

- 4 or 8 for Interleave Burst

• Programmable CAS Latency : 2,3 clocks

• All inputs and outputs referenced to the positive edge of the

system clock

• Data mask function by DQM

• Internal dual banks operation

• Burst Read Single Write operation

• Special Function Support

- PASR(Partial Array Self Refresh)

- Auto TCSR(Temperature Compensated Self Refresh)

- Programmable Driver Strength Control

- Full Strength or 1/2, 1/4, of Full Strength

- Deep Power Down Mode

• Automatic precharge, includes CONCURRENT Auto Precharge

Mode and controlled Precharge

更新时间:2021-9-14 10:50:00
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