位置:IS42VM16160M-5BLI > IS42VM16160M-5BLI详情

IS42VM16160M-5BLI中文资料

厂家型号

IS42VM16160M-5BLI

文件大小

937.43Kbytes

页面数量

27

功能描述

4M x 16Bits x 4Banks Mobile Synchronous DRAM

数据手册

下载地址一下载地址二

生产厂商

ISSI

IS42VM16160M-5BLI数据手册规格书PDF详情

Features

▪ JEDEC standard1.8V power supply

• Auto refresh and self refresh

• All pins are compatible with LVCMOS interface

• 8K refresh cycle every 16ms (A2 grade) or 64ms (Industrial,

A1 grade)

• Programmable Burst Length and Burst Type

- 1, 2, 4, 8 or Full Page for Sequential Burst

- 4 or 8 for Interleave Burst

• Programmable CAS Latency : 2,3 clocks

• All inputs and outputs referenced to the positive edge of the

system clock

• Data mask function by DQM

• Internal 4 banks operation

• Burst Read Single Write operation

• Special Function Support

- PASR(Partial Array Self Refresh)

- Auto TCSR(Temperature Compensated Self Refresh)

- Programmable Driver Strength Control

• Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength

- Deep Power Down Mode

• Automatic precharge, includes CONCURRENT Auto Precharge

Mode and controlled Precharge

更新时间:2026-3-1 11:08:00
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