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JANTXV2N6768中文资料
JANTXV2N6768数据手册规格书PDF详情
The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
JANTXV2N6768产品属性
- 类型
描述
- 型号
JANTXV2N6768
- 制造商
International Rectifier
- 功能描述
Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3
- 制造商
International Rectifier
- 功能描述
100V THRU 500V, UP TO 38A, N-CH, ENHANCEMENT MODE MOSFET PWR - Bulk
- 制造商
Microsemi Corporation
- 功能描述
N CHANNEL MOSFET, TO-204AA, LAW - Bulk
更新时间：2025-10-7 13:31:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/MOT |
24+ |
TO-3 |
523 |
||||
MICROSEMI |
638 |
原装正品 |
|||||
Microsemi Corporation |
22+ |
TO204AE |
9000 |
原厂渠道,现货配单 |
|||
Microsemi Corporation |
23+ |
TO204AE |
9000 |
原装正品，支持实单 |
|||
SILICONIX |
23+ |
SMD |
8650 |
受权代理!全新原装现货特价热卖! |
|||
IR |
23+ |
TO-3 |
8000 |
只做原装现货 |
|||
SILICONIX |
24+ |
TO-3 |
990000 |
明嘉莱只做原装正品现货 |
|||
IR |
23+ |
TO-3 |
7000 |
||||
IR |
三年内 |
1983 |
只做原装正品 |
||||
INFINEON TECHNOLOGIES AG |
2118+ |
原厂封装 |
6800 |
公司现货全新原装假一罚十特价 |
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