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JANSR2N7666U2A中文资料

厂家型号

JANSR2N7666U2A

文件大小

440.68Kbytes

页面数量

14

功能描述

Radiation Hardened Power MOSFET Surface-Mount (SupIR-SMD™) -200V, -62A, P-channel, R9 Superjunction Technology

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

JANSR2N7666U2A数据手册规格书PDF详情

Features

• Single event effect (SEE) hardened

(up to LET of 90.5 MeV·cm2/mg)

• Low RDS(on)

• Improved SOA for linear mode operation

• Fast switching

• Low total gate charge

• Simple drive requirements

• Hermetically sealed

• Electrically isolated

• Light weight

ESD rating: Class 3B per MIL-STD-750, Method 1020

Features

• Single event effect (SEE) hardened

(up to LET of 90.5 MeV·cm2/mg)

• Low RDS(on)

• Improved SOA for linear mode operation

• Fast switching

• Low total gate charge

• Simple drive requirements

• Hermetically sealed

• Electrically isolated

• Light weight

ESD rating: Class 3B per MIL-STD-750, Method 1020

更新时间:2025-10-9 14:00:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
22+
6000
终端可免费供样,支持BOM配单
IR
23+
8000
只做原装现货
IR
23+
7000
RP
23+
SOP64
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
MSC
23+
65480
ANY
1
全新原装 货期两周
MICROSEMI
638
原装正品