位置:JANSR2N7583U2A > JANSR2N7583U2A详情

JANSR2N7583U2A中文资料

厂家型号

JANSR2N7583U2A

文件大小

1459.48Kbytes

页面数量

14

功能描述

Radiation Hardened Power MOSFET Surface Mount (SupIR-SMD™) 200V, 56A, N-channel, R6 Technology

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

JANSR2N7583U2A数据手册规格书PDF详情

Features

 Single event effect (SEE) hardened

(up to LET of 90 MeV·cm2/mg)

 Low RDS(on)

 Low total gate charge

 Simple drive requirements

 Hermetically sealed

 Ceramic package

 Light weight

 Surface mount

 ESD rating: Class 3A per MIL-STD-750, Method 1020

Potential Applications

 DC-DC converter

 Motor drives

 Electric propulsion

Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of

90 MeV·cm2/mg. The combination of low RDS(on) and low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor controllers. These devices retain all of the well-established

advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical

parameters.

更新时间:2025-10-8 14:00:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
22+
6000
终端可免费供样,支持BOM配单
IR
23+
8000
只做原装现货
IR
23+
7000
IR
638
原装正品
IR
2447
20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
24+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择