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IRLI2203N中文资料
IRLI2203N数据手册规格书PDF详情
VDSS = 30V R
DS(on) = 0.007Ω
ID = 61A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Logic-Level Gate Drive
Advanced Process Technology
solated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
IRLI2203N产品属性
- 类型
描述
- 型号
IRLI2203N
- 功能描述
MOSFET N-CH 30V 61A TO220FP
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
25+ |
TO-220F |
20300 |
IR原装特价IRLI2203N即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
TO-220 |
46 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
TO 220F |
161081 |
明嘉莱只做原装正品现货 |
|||
INTERNATIONA |
05+ |
原厂原装 |
4441 |
只做全新原装真实现货供应 |
|||
IR |
2015+ |
TO-220F |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
||||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON |
25+ |
TO-220 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
IRLI2203N 资料下载更多...
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