VDSS = 30V R

DS(on) = 0.007Ω

ID = 61A

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Logic-Level Gate Drive

Advanced Process Technology

solated Package

High Voltage Isolation = 2.5KVRMS

Sink to Lead Creepage Dist. = 4.8mm

Fully Avalanche Rated

Lead-Free